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  unisonic technologies co., ltd UT2327 power mosfet  www.unisonic.com.tw 1 of 5 copyright ? 2007 unisonic technologies co., ltd qw-r502-108,a  p-channel enhancement mode description the utc UT2327l is p-channel enhancement mode power mosfet, designed in serried ranks. with fast switching speed, low on-resistanc e, favorable stabilization. used in commercial and industrial surface mount applications and suited for low voltage applications such as dc/dc converters. symbol 1.gate 3. source 2. drain sot-23 1 2 3 *pb-free plating product number: UT2327l ordering information ordering number pin assignment normal lead free plating package 1 2 3 packing UT2327-ae3-r UT2327l-ae3-r sot-23 s g d tape reel UT2327l-ae3-r (1)packing type (2)package type (3)lead plating (1) r: tape reel (2) ae3: sot-23 (3) l: lead free plating, blank: pb/sn  marking 23a lead plating www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2327 power mosfet  unisonic technologies co., ltd 2 of 5 www.unisonic.com.tw qw-r502-108,a  absolute maximum ratings (ta = 25 
, unless otherwise specified) parameter symbol rating units drain-source voltage v ds - 20 v gate-source voltage v gs 12 v ta=25 
-2.6 a continuous drain current (note 3) ta=70 
i d -2.1 a pulsed drain current (note 1, 2) i dm -10 a total power dissipation (ta=25 
) p d 1.38 w junction temperature t j +150 
storage temperature t stg -55 ~ +150 
note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings onl y and functional device operat ion is not implied. thermal data parameter symbol min typ max unit junction to ambient (note 3) ja 90 /w 
electrical characteristics (t j =25 
, unless otherwise specified) parameter symbol test conditions min typ max units off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250ua -20 v t j =25 v ds =-20v, v gs =0v -1 ua drain-source leakage current t j =70 i dss v ds =-16v, v gs =0v -10 ua gate-source leakage current i gss v gs =12v 100 na breakdown voltage temper ature coefficient ? bv dss / ? t j reference to 25 , i d =-1ma -0.1 v/ on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =-250ua -0.5 v v gs =-5v, i d =-2.8a 130 m ? drain-source on-state resistance (note 2) r ds(on) v gs =-2.8v, i d =-2.0a 190 m ? forward transconductance g fs v ds =-5v, i d =-2.8a 4.4 s dynamic characteristics input capacitance c iss 295 pf output capacitance c oss 170 pf reverse transfer capacitance c rss v gs =0v, v ds =-6v, f=1.0mhz 65 pf switching characteristics turn-on delay time (note 2) t d(on) 5.2 ns turn-on rise time t r 9.7 ns turn-off delay time t d(off) 19 ns turn-off fall time t f v ds =-15v, v gs =-10v, i d =-1a, r g =6 ? , r d =15 ? 29 ns total gate charge (note 2) q g 5.2 10 nc gate-source charge q gs 1.36 nc gate-drain charge q gd v ds =-6v, v gs =-5v, i d =-2.8a 0.6 nc source- drain diode ratings and characteristics drain-source diode forward voltage(note2) v sd t j =25 , i s =-1.6a, v gs =0v -1.2 v maximum continuous drain-source diode forward current i s v d =v g =0v, v s =-1.2v -1 a maximum pulsed drain-source diode forward current (note 1) i sm -10 a notes: 1. pulse width limited by t j(max) 2. pulse width  300us, duty cycle 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 270 /w when mounted on min. www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2327 power mosfet  unisonic technologies co., ltd 3 of 5 www.unisonic.com.tw qw-r502-108,a  typical characteristics 0 4 1 drain-to-source voltage, v ds (v) fig 1. typical output characteristics 6 2 134 0 2 3 5 drain current, i d (a) 5 t a = 25 v gs = -4v v gs = -5v v gs = -3v v gs = -2v 0 4 1 drain-to-source voltage, v ds (v) fig 2. typical output characteristics 6 2 134 0 2 3 5 drain current, i d (a) 5 t a = 150 v gs = -4v v gs = -5v v gs = -3v v gs = -2v 0 600 200 gate-to-source voltage, v gs (v) fig 3. on-resistance vs. gate voltage 10 246 0 400 800 r ds(on) ( ? ) 8 i d = -2a t a =25 
-50 1.6 0.8 junction temperature, t j ( 
) fig 4. normalized on-resistance 150 050100 0.6 1 1.4 1.8 normalized r ds(on) i d = -2.8a v gs = -5v 1.2 0.1 1 0 source-to-drain voltage, v sd (v) fig 5. forward characteristic of reverse diode 1.3 0. 3 0. 5 0.7 0 10 continuous source current, i s (a) 1.1 -50 junction temperature, t j ( 
) fig 6. gate threshold voltage vs. junction temperature 150 050100 0.0 0.5 1.0 1.5 gate threshold voltage, v gs(th) (v) t j =25 
t j =150 
0.9  www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2327 power mosfet  unisonic technologies co., ltd 4 of 5 www.unisonic.com.tw qw-r502-108,a  typical characteristics(cont.) 0 3 2 total gate charge, q g (nc) fig 7. gate charge characteristics 6 2 0 5 gate to source voltage, v gs (v) 1 drain-to-source voltage,v ds (v) fig 8. typical capacitance characteristics 13 3711 0 100 1000 c (pf) i d = -2. 8a v ds =-6v 4 1 4 f =1. 0mhz c iss c oss c rss 59 0.1 1 0.1 drain-to-source voltage,v ds (v) fig 9. maximum safe operating area 100 1 0. 01 100 i d (a) 0.0001 pulse width, t (s) fig 10. effective transient thermal impedance 1000 0.01 1 10 0.001 0.01 0.1 1 normalized thermal response ( ja) 10 10 1ms t a =25c single pulse 10ms 100ms 1s dc 100 0.001 0.1 p dm t t duty factor = t /t peak t j = p dm x ja + ta ja = 270 /w  fig 11. switching time waveform fig 12. gate charge waveform v ds 90% 10% v gs t d(on) t r t d( of f) t f v g -5v q g q gs q gd q charge www.datasheet.net/ datasheet pdf - http://www..co.kr/
UT2327 power mosfet  unisonic technologies co., ltd 5 of 5 www.unisonic.com.tw qw-r502-108,a  utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. www.datasheet.net/ datasheet pdf - http://www..co.kr/


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